| | | |
|---|
|  |  |  |
|---|
| Variants | | | |
|---|
Price |
|---|
| Offers (incl. referral links) | | | |
|---|
| Remove | Remove | Remove |
|---|
[[{"Ft":"Connectivity","Fn":"Ports","Fv":"PCIe Gen3 x4, NVMe 1.3"},{"Ft":"Construction","Fn":"Form Factor","Fv":"M.2 2280"},{"Ft":"Dimensions","Fn":"Size | Height","Fv":"2.3 mm"},{"Ft":"Dimensions","Fn":"Size | Length","Fv":"80 mm"},{"Ft":"Dimensions","Fn":"Size | Width","Fv":"22 mm"},{"Ft":"Function","Fn":"Operating Temperature","Fv":"0°C to 70°C"},{"Ft":"Performance","Fn":"Durability","Fv":"650 TBW"},{"Ft":"Performance","Fn":"Durability","Fv":"2 million hours"},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read Up to 308K / Random Write Up to 332K / Sequential Read Up to 3500 MB/s / Sequential Write Up to 3000 MB/s"},{"Ft":"Performance","Fn":"Memory | Capacity","Fv":"2 GB"},{"Ft":"Performance","Fn":"Memory | Type","Fv":"DDR3L"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"5.9W Read / 5W Write"},{"Ft":"Performance","Fn":"Storage","Fv":"512GB or 1TB, 3D TLC NAND Flash"},{"Ft":"Production","Fn":"Debut","Fv":"2021-05-14"},{"Ft":"Production","Fn":"Model Name","Fv":"GP-GM301TB-G"}],[{"Ft":"Connectivity","Fn":"Ports","Fv":"PCI-Express 4.0 x16, NVMe 1.3"},{"Ft":"Construction","Fn":"Form Factor","Fv":"PCI-Express x16 expansion card"},{"Ft":"Dimensions","Fn":"Size | Depth","Fv":"19.80 mm"},{"Ft":"Dimensions","Fn":"Size | Height","Fv":"120.04 mm"},{"Ft":"Dimensions","Fn":"Size | Length","Fv":"278.59 mm"},{"Ft":"Function","Fn":"Operating Temperature","Fv":"0°C to 70°C"},{"Ft":"Function","Fn":"Processor","Fv":"PHISON PS5016-E16 controller"},{"Ft":"Function","Fn":"Security","Fv":"TRIM \u0026amp; S.M.A.R.T"},{"Ft":"Performance","Fn":"Durability","Fv":"1.7 million hours MTBF"},{"Ft":"Performance","Fn":"Durability","Fv":"Limited 5-years or 850TBW Warranty "},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read 425k IOPS / Random Write 440k IOPS / Sequential Read Up to 15000 MB/s / Sequential Write Up to 9500 MB/s"},{"Ft":"Performance","Fn":"Memory | Capacity","Fv":"512 MB"},{"Ft":"Performance","Fn":"Memory | Type","Fv":"DDR4"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"29.43W read / 28.21W write average / 14.1 W Idle"},{"Ft":"Performance","Fn":"Storage","Fv":"3D TLC NAND Flash, 2TB"},{"Ft":"Production","Fn":"Debut","Fv":"2021-07-01"},{"Ft":"Production","Fn":"Model Name","Fv":"GP-ASACNE6200TTTDA"}],[{"Ft":"Connectivity","Fn":"Ports","Fv":"PCIe 3.0 x4, NVMe 1.4"},{"Ft":"Construction","Fn":"Form Factor","Fv":"M.2 (2280)"},{"Ft":"Dimensions","Fn":"Size | Depth","Fv":"22.15 mm"},{"Ft":"Dimensions","Fn":"Size | Height","Fv":"2.38 mm"},{"Ft":"Dimensions","Fn":"Size | Width","Fv":"80.15 mm"},{"Ft":"Dimensions","Fn":"Weight","Fv":"8.0 g"},{"Ft":"Function","Fn":"Operating Temperature","Fv":"0 - 70 C"},{"Ft":"Function","Fn":"Processor","Fv":"Samsung Pablo Controller"},{"Ft":"Function","Fn":"Security","Fv":"AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive)"},{"Ft":"Performance","Fn":"Durability","Fv":"600 TB"},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read Up to 500K IOPS / Random Write Up to 480K IOPS / Sequential Read Up to 3,500 MB/s / Sequential Write Up to 3,000 MB/s"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"Average 4.6 W Maximum 5.3 W"},{"Ft":"Performance","Fn":"Storage","Fv":"Samsung V-NAND 3-bit MLC"},{"Ft":"Production","Fn":"Debut","Fv":"2021-03-10"}]]