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[[{"Ft":"Connectivity","Fn":"Ports","Fv":"SATA III (6 Gbps), compatible with SATA I and SATA II"},{"Ft":"Construction","Fn":"Form Factor","Fv":"2.5\u0026#34; internal SSD"},{"Ft":"Dimensions","Fn":"Size | Depth","Fv":"2.75 inch"},{"Ft":"Dimensions","Fn":"Size | Height","Fv":"0.27 inch"},{"Ft":"Dimensions","Fn":"Size | Width","Fv":"3.94 inch"},{"Ft":"Dimensions","Fn":"Weight","Fv":"0.19 lbs"},{"Ft":"Function","Fn":"Processor","Fv":"Samsung MKX Controller"},{"Ft":"Function","Fn":"Security","Fv":"Encryption Class 0 (AES 256) TCG/Opal v2.0, MS eDrive (IEEE1667)"},{"Ft":"Performance","Fn":"Durability","Fv":"1.5 Million Hours MTBF / 1,500 G \u0026amp; 0.5ms Shock proof"},{"Ft":"Performance","Fn":"Durability","Fv":"600TB written"},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read Up to 98K IOPS / Random Write Up to 88K IOPS / Sequential ReadUp to 560 MB/s / Sequential Write Up to 530 MB/s"},{"Ft":"Performance","Fn":"Memory | Capacity","Fv":"1GB"},{"Ft":"Performance","Fn":"Memory | Type","Fv":"LPDDR4"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"2.2W average / 3.5W peak / 30mW max idle"},{"Ft":"Performance","Fn":"Storage","Fv":"Samsung V-NAND 3-bit MLC (TLC)"},{"Ft":"Production","Fn":"Debut","Fv":"2021-01-20"},{"Ft":"Production","Fn":"Model Name","Fv":"MZ-77E1T0B/AM"}],[{"Ft":"Connectivity","Fn":"PCI Express","Fv":"PCIe Gen3 x4, NVMe 1.3"},{"Ft":"Dimensions","Fn":"Size | Width","Fv":"22 mm"},{"Ft":"Function","Fn":"Compatibility","Fv":"PCIe Gen3 / Gen2 / Gen1"},{"Ft":"Function","Fn":"Operating Temperature","Fv":"0°C ~ 70°C"},{"Ft":"Performance","Fn":"Durability","Fv":"Up to 1,500,000 Hours MTBF"},{"Ft":"Performance","Fn":"Durability","Fv":"800 TBW"},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read 215,000 IOPS / Random Write 330,000 IOPS / Sequential Read 2400 MB/s / Sequential Write 1750 MB/s"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"3.6W (max) / 20mW (idle)"},{"Ft":"Performance","Fn":"Storage","Fv":"256GB, 512GB, 1TB, or 2TB 3D NAND"},{"Ft":"Production","Fn":"Debut","Fv":"2021-07-05"}],[{"Ft":"Connectivity","Fn":"Ports","Fv":"PCI-Express 4.0 x16, NVMe 1.3"},{"Ft":"Construction","Fn":"Form Factor","Fv":"PCI-Express x16 expansion card"},{"Ft":"Dimensions","Fn":"Size | Depth","Fv":"19.80 mm"},{"Ft":"Dimensions","Fn":"Size | Height","Fv":"120.04 mm"},{"Ft":"Dimensions","Fn":"Size | Length","Fv":"278.59 mm"},{"Ft":"Function","Fn":"Operating Temperature","Fv":"0°C to 70°C"},{"Ft":"Function","Fn":"Processor","Fv":"PHISON PS5016-E16 controller"},{"Ft":"Function","Fn":"Security","Fv":"TRIM \u0026amp; S.M.A.R.T"},{"Ft":"Performance","Fn":"Durability","Fv":"1.7 million hours MTBF"},{"Ft":"Performance","Fn":"Durability","Fv":"Limited 5-years or 850TBW Warranty "},{"Ft":"Performance","Fn":"I/O Speed","Fv":"Random Read 425k IOPS / Random Write 440k IOPS / Sequential Read Up to 15000 MB/s / Sequential Write Up to 9500 MB/s"},{"Ft":"Performance","Fn":"Memory | Capacity","Fv":"512 MB"},{"Ft":"Performance","Fn":"Memory | Type","Fv":"DDR4"},{"Ft":"Performance","Fn":"Power Consumption","Fv":"29.43W read / 28.21W write average / 14.1 W Idle"},{"Ft":"Performance","Fn":"Storage","Fv":"3D TLC NAND Flash, 2TB"},{"Ft":"Production","Fn":"Debut","Fv":"2021-07-01"},{"Ft":"Production","Fn":"Model Name","Fv":"GP-ASACNE6200TTTDA"}]]