Samsung Flashbolt 3rd-Generation HBM2E
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Product Description
Samsung's new Flashbolt third-generation High Bandwidth Memory 2E (HBM2E) maximizes high performance computing (HPC) systems. It is the highest performing DRAM available today, delivering twice the capacity of the previous-generation 8GB HBM2 'Aquabolt'. It is achieved by stacking 8 layers of 10nm 16 gigabit DRAM dies on top of a buffer chip.
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Specifications
Performance
Bandwidth
Max538 GB/s per stack
Typical410 GB/s per stack
Typical410 GB/s per stack
I/O Speed
Max4.2 Gbps
Typical3.2 Gbps
Typical3.2 Gbps
Production
Debut
2020-02-04
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